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KMID : 1059519910350050534
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Journal of the Korean Chemical Society
1991 Volume.35 No. 5 p.534 ~ p.538
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Spectrophotometric Determination of Traces of Boron in Semiconductor-grade Trichlorosilane
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Kim Dong-Kwon
Kim Hee-Young
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Abstract
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A procedure for spectrophotometric determination of traces of boron in high-purity trichlorosilane (TCS) is proposed utilizing an adsorptive separation. NaCl is chosen as an Lewis base adsorbent which forms a complex with boron compounds in TCS, and is well dissolved in sulfuric acid-quinalizarin color-forming agent without causing an interference in colorimetric measurements. The proposed adsorptive separation method is free from the formation of silica gel and gas bubbles during the analysis of TCS. The method reveals that the boron concentration in a semiconductor grade TCS is 6.1 μg/l within the standard deviation of ±20%. On the other hand, the boron concentration of the purified TCS which is separated from NaCl-boron compounds complex is reduced to 0.2 μg/l, showing the efficient applicability of NaCl to the adsorptive separation. The effectiveness of NaCl for the removal of boron in TCS purification is also described in comparison with other well-known adsorbents.
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